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Course Information
Course Unit Title : Transport Phenomena in Semiconductor Devices
Course Unit Code : 01EEN5114
Type of Course Unit : Optional
Level of Course Unit : Second Cycle
Year of Study : Preb
Semester : 255.Semester
Number of ECTS Credits Allocated : 6,00
Name of Lecturer(s) : ---
Course Assistants : ---
Learning Outcomes of The Course Unit : ----
Mode of Delivery : Face-To-Face
Prerequisities and Co-requisities Courses : Unavailable
Recommended Optional Programme Components : Unavailable
Course Contents : Crystal structure and band theory of electronic conduction, carrier scattering, the Boltzmann Transport Equation, low and high field transport in GaAs, InP and other III-V compounds, properties of interest for device applications, semiclassical nonstationary charge transport models, submicron device modeling and simulation techniques, Monte Carlo simulations.
Languages of Instruction : Turkish-English
Course Goals : Introduction to transport phenomena in semiconductor devices.
Course Aims : Introduction to transport phenomena in semiconductor devices.
WorkPlacement   Not available
Recommended or Required Reading
Textbook : Semiconductor Devices, Yaduvir Singh
Additional Resources : Semiconductor Devices, Yaduvir Singh
Material Sharing
Documents :
Assignments :
Exams :
Additional Material :
Planned Learning Activities and Teaching Methods
Lectures, Practical Courses, Presentation, Seminar, Project, Laboratory Applications (if necessary)
ECTS / Table Of Workload (Number of ECTS credits allocated)
Student workload surveys utilized to determine ECTS credits.
Activity :
Number Duration Total  
Course Duration (Excluding Exam Week) :
16 3 48  
Time Of Studying Out Of Class :
16 4 64  
Homeworks :
1 16 16  
Presentation :
0 0 0  
Project :
0 0 0  
Lab Study :
0 0 0  
Field Study :
0 0 0  
Visas :
1 15 15  
Finals :
1 25 25  
Workload Hour (30) :
30  
Total Work Charge / Hour :
168  
Course's ECTS Credit :
6      
Assessment Methods and Criteria
Studies During Halfterm :
Number Co-Effient
Visa :
1 50
Quiz :
1 30
Homework :
1 20
Attendance :
0 0
Application :
0 0
Lab :
0 0
Project :
0 0
Workshop :
0 0
Seminary :
0 0
Field study :
0 0
   
TOTAL :
100
The ratio of the term to success :
50
The ratio of final to success :
50
TOTAL :
100
Weekly Detailed Course Content
Week Topics  
1 Crystal structure and band theory of electronic conduction
 
2 the Boltzmann Transport Equation
 
3 the Boltzmann Transport Equation
 
4 low and high field transport in GaAs, InP and other III-V compounds
 
5 low and high field transport in GaAs, InP and other III-V compounds
 
6 low and high field transport in GaAs, InP and other III-V compounds
 
7 device applications
 
8 device applications
 
9 semiclassical nonstationary charge transport models
 
10 semiclassical nonstationary charge transport models
 
11 semiclassical nonstationary charge transport models
 
12 submicron device modeling and simulation techniques
 
13 submicron device modeling and simulation techniques
 
14

Monte Carlo simulations.
 
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