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Course Information
Course Unit Title : Introduction to Contact Problems
Course Unit Code : 01FZK6139
Type of Course Unit : Optional
Level of Course Unit : Second Cycle
Year of Study : 1
Semester : 1.Semester
Number of ECTS Credits Allocated : 6,00
Name of Lecturer(s) :
Course Assistants :
Learning Outcomes of The Course Unit :
Mode of Delivery : Face-To-Face
Prerequisities and Co-requisities Courses : Unavailable
Recommended Optional Programme Components : Unavailable
Course Contents :
Languages of Instruction : Turkish
Course Goals :
Course Aims :
WorkPlacement   Not Available
Recommended or Required Reading
Textbook : Metal-Semiconductor Contacts-E.H.Rhoderick, R.H. Williams
Additional Resources :
Material Sharing
Documents :
Assignments :
Exams :
Additional Material :
Planned Learning Activities and Teaching Methods
Lectures, Practical Courses, Presentation, Seminar, Project, Laboratory Applications (if necessary)
ECTS / Table Of Workload (Number of ECTS credits allocated)
Student workload surveys utilized to determine ECTS credits.
Activity :
Number Duration Total  
Course Duration (Excluding Exam Week) :
14 3 42  
Time Of Studying Out Of Class :
14 3 42  
Homeworks :
4 10 40  
Presentation :
0 0 0  
Project :
0 0 0  
Lab Study :
0 0 0  
Field Study :
0 0 0  
Visas :
1 20 20  
Finals :
1 25 25  
Workload Hour (30) :
30  
Total Work Charge / Hour :
169  
Course's ECTS Credit :
6      
Assessment Methods and Criteria
Studies During Halfterm :
Number Co-Effient
Visa :
1 30
Quiz :
0 0
Homework :
5 10
Attendance :
14 0
Application :
0 0
Lab :
0 0
Project :
0 0
Workshop :
0 0
Seminary :
0 0
Field study :
0 0
   
TOTAL :
40
The ratio of the term to success :
40
The ratio of final to success :
60
TOTAL :
100
Weekly Detailed Course Content
Week Topics  
1 some surface properties of solids
 
2 the formation of a Schottky barrier
 
3 generalized analysis of the Barden model
 
4 intimate contacts, image-force lowering of the barrier
 
5 methots of measurement of barrier heights, Electronegativity and work function
 
6 emission over the barrier
 
7 midterm
 
8 tunnelling through the barrier, recombination in the depletion region
 
9 hole injection, reverse characteristics
 
10 transient effects, the effect of an interfacial layer, "T0" effects, numerical analysis of current flow
 
11 the capacitance of an ideal diode under reverse bias
 
12 the effect of an insulating layer with interfaces states, non-uniform donor distribution
 
13 C/V metots of measuring dopant distributions, the effects of deep traps
 
14 the capacitance under forward bias